-2 self-referencing for silicon nitride photonics via a heterogeneously integrated lithium niobate layer
En palabras de los autores
Heterogeneous integration combines complementary material properties in a single photonic platform. Here, we demonstrate on-chip -2 self-referencing in a heterogeneously integrated SiN/LiNbO platform, in which supercontinuum generation in a SiN waveguide and second-harmonic generation in a LiNbO layer are spatially separated and linked by adiabatic escalator couplers. Pumped by a 1560 nm mode-locked laser with 75 pJ on-chip pulse energy, we detect the carrier-envelope offset frequency with 30 dB signal-to-noise ratio in 300 kHz resolution bandwidth. A comparative measurement confirms that the second harmonic originates in the LiNbO layer and indicates opportunity for further improvements through periodic poling. These results establish heterogeneous SiN/LiNbO integration as a viable building block for self-referenced ultrafast pulse sources in low-loss SiN photonics.
Apareció: martes, 22 de septiembre. arXiv. Preprint, todavía sin revisión por pares.