Ultralow-power, high-speed programmable Si photonic circuits with InGaAsP membrane

Programmable photonic circuits have emerged as a promising platform for applications ranging from optical communications to artificial-intelligence computing and quantum information processing, but their scaling is fundamentally constrained by their essential building block, the optical phase shifter. Existing phase-shifter technologies face inherent trade-offs among power consumption, operating speed, modulation efficiency, optical loss, and thermal crosstalk, making it challenging to realize high-performance, large-scale programmable photonic circuits. Here, we present a programmable photonic circuit based on InGaAsP/Si hybrid metal-oxide-semiconductor (MOS) phase shifters that combines ultralow power consumption, high-speed operation, high modulation efficiency, low optical loss and negligible thermal crosstalk. The phase shifters combine the low leakage current of a MOS capacitor with the strong carrier-induced refractive-index modulation of an InGaAsP membrane, achieving a static power consumption below 30 fW/$\pi$, a switching time of 555 ps, a phase-modulation efficiency ($V_{\pi }L$) of 0.13 Vcm and a carrier-induced excess insertion loss of only 0.20 dB/$\pi$. We integrate these phase shifters into a programmable Mach-Zehnder interferometer mesh and demonstrate optical switching and programmable unitary transformations, while maintaining femtowatt-level static power consumption across integrated phase shifters. We further demonstrate circuit-level operation with negligible thermal crosstalk, addressing a major obstacle to densely integrated programmable photonic circuits. These results establish a foundation for scalable, high-performance programmable photonic systems for next-generation signal processing and computation.