f-2f self-referencing for silicon nitride photonics via a heterogeneously integrated lithium niobate layer

Weichen Fan; Bastian Ruhnke; Camiel Op de Beeck; Giulio Tavani; Anton Vasiliev; Franz K\"artner; Tobias Herr

In the authors' words

Heterogeneous integration combines complementary material properties in a single photonic platform. Here, we demonstrate on-chip $f$ -2 $f$ self-referencing in a heterogeneously integrated Si $_{3}$ N $_{4}$ /LiNbO $_{3}$ platform, in which supercontinuum generation in a Si $_{3}$ N $_{4}$ waveguide and second-harmonic generation in a LiNbO $_{3}$ layer are spatially separated and linked by adiabatic escalator couplers. Pumped by a 1560 nm mode-locked laser with 75 pJ on-chip pulse energy, we detect the carrier-envelope offset frequency with 30 dB signal-to-noise ratio in 300 kHz resolution bandwidth. A comparative measurement confirms that the second harmonic originates in the LiNbO $_{3}$ layer and indicates opportunity for further improvements through periodic poling. These results establish heterogeneous Si $_{3}$ N $_{4}$ /LiNbO $_{3}$ integration as a viable building block for self-referenced ultrafast pulse sources in low-loss Si $_{3}$ N $_{4}$ photonics.

Main resultLimitation the authors admit

f-2f self-referencing for silicon nitride photonics via a heterogeneously integrated lithium niobate layer

In the authors' words

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$f$ -2 $f$ self-referencing for silicon nitride photonics via a heterogeneously integrated lithium niobate layer