Antiferroelectric hafnia down to the 2D limit
In the authors' words
This journal does not let us republish the full abstract. Here are the two sentences Pipette selected, quoted from it. Read the rest at the publisher.
Main result
In this work, we demonstrate that single-crystalline hafnia, a lead-free CMOS-compatible material, exhibits antiferroelectricity under compressive-strain conditions.
Appeared: Saturday, September 26. Science. Peer-reviewed journal.