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Antiferroelectric hafnia down to the 2D limit

Xin Li, Guodong Ren, Haidong Lu, Kartik Samanta, Amit Kumar Shah, Kai Huang, Pravan Omprakash, Yu Yun, Pratyush Buragohain, Huibo B. Cao, Yan Wu, Jordan A. Hachtel, Andrew R. Lupini, Miaofang Chi, Juan Carlos Idrobo, Evgeny Y. Tsymbal, Alexei L. Gruverman, Rohan Mishra, Xiaoshan Xu

Peer-reviewed journalClaims a big stepReal-world use

In the authors' words

This journal does not let us republish the full abstract. Here are the two sentences Pipette selected, quoted from it. Read the rest at the publisher.

Main result
In this work, we demonstrate that single-crystalline hafnia, a lead-free CMOS-compatible material, exhibits antiferroelectricity under compressive-strain conditions.

Appeared: Saturday, September 26. Science. Peer-reviewed journal.

DOI: 10.1126/science.ady5526