Efficient creation of shallow NV ensembles by high-angle ion implantation
En palabras de los autores
Negatively charged nitrogen-vacancy (NV) centers located a few nanometers below the diamond surface are key quantum defects for nanoscale sensing of external spins. However, the creation of shallow NV centers with high yield remains a materials challenge. Here, we demonstrate that high-angle ion implantation enhances the creation efficiency of shallow NV centers. By implanting N ions at angles exceeding 60, we achieve high NV yields approaching 10% with effective NV depths below 10 nm. These yields are significantly higher than those typically reported for shallow NV creation. The enhanced NV yield is consistent with an increased vacancy-to-nitrogen ratio in the near-surface region, which is expected to promote NV formation during annealing. The created NV ensembles show coherence properties comparable to those of single shallow NV centers at similar depths, and allow detection of nuclear spins in van der Waals materials attached to the diamond surface. Our results establish geometric control of ion implantation as a simple and broadly applicable approach to engineer shallow vacancy-related quantum defects.
Apareció: martes, 22 de septiembre. arXiv. Preprint con versión publicada.
DOI: 10.1103/d8vg-ntsg
Versión publicada: Phys. Rev. Materials 10, 086202 (2026)