Performance of Capacitively Loaded RF Electrodes on SiO2/Si Substrates for High-Speed Electro-Optic Modulators
En palabras de los autores
We experimentally investigate conventional and capacitively loaded traveling-wave RF electrodes fabricated on thermally grown SiO on high-resistivity silicon substrates for high-speed electro-optic modulators. The capacitively loaded electrodes exhibit RF attenuation coefficients as low as approximately , comparable to values reported for electrodes fabricated on insulating quartz substrates, while retaining the silicon handle and avoiding substrate removal or undercut processing. By varying the SiO buried-oxide (BOX) thickness and the capacitive-loading geometry, the microwave effective index can be engineered over a broad range while maintaining low RF propagation loss. This enables microwave-optical velocity matching over a wide range of optical wavelengths, from the ultraviolet to the telecom C-band. These results demonstrate that thermally oxidized silicon provides a simple and scalable substrate platform for low-loss traveling-wave electrodes in thin-film lithium niobate and thin-film lithium tantalate electro-optic modulators, as well as for high-speed RF interconnects in integrated transceivers and co-packaged optical systems.
Apareció: lunes, 21 de septiembre. arXiv. Preprint, todavía sin revisión por pares.
Comentario de los autores: 8 pages, 6 figures