Non-Uniform Quantum Well and Barrier Thickness Engineering for Robust Ultra-High TER and Low RA Ferroelectric Tunnel Junctions

HfO${}_2$-based ferroelectric tunnel junctions (FTJs) are promising candidates for scalable non-volatile memory, but simultaneously achieving a high tunneling electro-resistance ratio (TER) and a low resistance-area (RA) product remains challenging. To address this challenge, this work introduces non-uniform quantum well (QW) and barrier thickness engineering in HfO${}_2$-based multi-QW FTJs using a self-consistent Preisach-based ferroelectric (FE) model integrated with the coherent and inelastic non-equilibrium Green's function (NEGF) formalism. The non-uniform well and barrier configuration produces a wide range of FTJ design landscapes due to closely spaced, broad resonant states in the low resistance state (LRS) and a larger separation in the high resistance state (HRS), resulting in strong polarization-dependent resonant transmission with TER reaching the order of \mathbf{1\times10^{8}%} and an LRS RA product as low as $1\mathbf{\Omega }{\text{cdotcm}}^2$ at read bias and in the presence of scattering. By incorporating self-consistent elastic scattering into the NEGF framework, we also show that elastic scattering can positively influence the TER and RA performance of non-uniform FTJs by progressively increasing the overlap of the closely spaced resonances. Overall, the results establish non-uniform QW and barrier thickness as an effective and robust design parameter for controlling resonant-state alignment and achieving a favorable combination of high TER and low RA in HfO${}_2$-based multi-QW FTJs.