pipette
ESEspañol

Emergent frustrated magnetism in strain-patterned graphene

Yu-Chiang Hsieh, Wen-Han Kao, Christophe De Beule, Sheng-Zhu Ho, Ru-Long Gou, Bo-Nian Chen, Kuan-Yu Chou, Kuo-En Chang, Chin-Chia Chang, Ying-Mei Yang, Ching-Hua Kao, Hao-Chien Chiang, Jyun-Lin Chen, Sheng-Chin Ho, Kenji Watanabe, Takashi Taniguchi, Ming-Hao Liu, Ching-Hao Chang, Yi-Chun Chen, Ying-Jer Kao, Tse-Ming Chen

PreprintBold claims, read criticallyClaims a big step

In the authors' words

Geometrically frustrated magnetism conventionally arises from pre-existing magnetic moments on lattices whose geometry prevents their interactions from being simultaneously satisfied, giving rise to highly degenerate states and rich collective behavior. Creating such frustration in an intrinsically non-magnetic material presents a fundamentally different challenge, requiring both the magnetism and the competing interactions to emerge from correlated electrons. Here we show that this can be realized in graphene through lithographically programmable strain engineering. Patterning strain and the associated pseudo-magnetic field (PMF) into superlattices creates a correlated electronic system with flat bands and strong interactions. Transport measurements reveal interaction-driven insulating behavior, anisotropic magnetic hysteresis, and slow relaxation dynamics reminiscent of spin freezing, qualitatively captured by Monte Carlo simulations of competing magnetic moments on the PMF-defined ruby superlattice. Cryogenic magnetic force microscopy further reveals magnetic textures associated with the PMF landscape. These observations demonstrate frustrated magnetism emerging from correlated electrons in otherwise non-magnetic graphene. Our results establish lithographic strain engineering as a general and scalable route to flat bands and correlated states in van der Waals materials, providing a versatile platform for programmable quantum matter.

Main resultThe abstract does not state a limitation.

Appeared: Monday, September 28. arXiv. Preprint, not yet peer-reviewed.

Authors' comment: 56 pages (including supplementary information)