Current-voltage characteristics and resistive switching in epitaxial La0.67Sr0.33MnO3/SrMnO3/La0.67Sr0.33MnO3 multilayer

A. G. A. Rahman; R. K. Patel; Chandrani Nath; A. K. Pramanik

doi:10.1021/acsaelm.5c01046

In the authors' words

In present study, we investigate the structural properties and current-voltage ( $I$ - $V$ ) characteristics of an epitaxial multilayer composed of La $_{0.67}$ Sr $_{0.33}$ MnO $_{3}$ (25 nm)/SrMnO $_{3}$ (70 nm)/La $_{0.67}$ Sr $_{0.33}$ MnO $_{3}$ (25 nm), grown on different substrates i.e., SrTiO $_{3}$ (100), LaAlO $_{3}$ (100), Si (100). The used substrates not only have different chemical compositions in line with the film materials, also they have different lattice parameters which would tune the material chemistry and lattice strain at the interface significantly. Our $I$ - $V$ measurements reveal distinct electrical behaviors depending on the substrate. The multilayers grown on oxide SrTiO $_{3}$ (100) and LaAlO $_{3}$ (100) substrates exhibit regular $I$ - $V$ with slight nonlinearity at low applied voltages. In contrast, $I$ - $V$ in multilayer with Si(100) substrate exhibits large asymmetry and notable resistive switching (RS) behavior at room temperature, where a resistance ratio around 10 between the high resistance state (HRS) and low resistance state (LRS) is observed. While the observed $I$ - $V$ behavior is sensitive to substrate-induced interfacial disorder and formation of trap bands within bandgap of SrMnO $_{3}$ , the present results have potential applications in future memory and memristive devices.

Main resultThe abstract does not state a limitation.

Current-voltage characteristics and resistive switching in epitaxial La0.67​Sr0.33​MnO3​/SrMnO3​/La0.67​Sr0.33​MnO3​ multilayer

In the authors' words

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