Radiation-technological processes under intense irradiation of a complex fractal medium

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• Chemistry & materials/MaterialsSep 25, 2026

  Atomic-scale quantification of hydrogen in metal hydrides by electron ptychography

  Here, we demonstrate atomic-resolution imaging and quantitative analysis of hydrogen in metal hydrides using energy-filtered multislice electron ptychography (MEP).

  Pengcheng Li, Chenglin Pua, Zehao Dong and 6 more — Science Advances

  Peer-reviewed journalClaims a big step

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• Chemistry & materials/MaterialsSep 25, 2026

  Sliding-before-breaking governs deformation in chitinous extracellular matrices reinforced by strong, fatigue-resistant chitin

  These findings establish a sliding-before-breaking principle, in which backbone stability preserves structural integrity while regulated interfacial sliding governs energy dissipation and growth.

  Zhangmin Wan, Chris Zhou, Maëva Perez and 11 more — Proceedings of the National Academy of Sciences

  Peer-reviewed journalBold claims, read critically

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• Chemistry & materials/MaterialsSep 25, 2026

  Combining physical models with dynamically acquired experimental information for the optimization of multicomponent NASICON fast ionic conductors in a self-driving laboratory

  Here, we introduce a strategy that simultaneously and dynamically assesses composition-dependent synthetic accessibility and target properties via aggregated cost functions that guide autonomous experimentation in a truly self-driving and self-learning mode.

  Bernardus Rendy, Yuxing Fei, Tanjin He and 9 more — arXiv

  PreprintReal-world use

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• Chemistry & materials/MaterialsSep 25, 2026

  Molecular Beam Epitaxy of AgTaO3

  We report the first synthesis of single-crystal AgTaO3 thin films using molecular-beam epitaxy (MBE).

  Tobias Schwaigert, Joshua Maile, Olivia Peek and 6 more — arXiv

  PreprintClaims a big step

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• Chemistry & materials/MaterialsSep 25, 2026

  From Processing to Functionality: Engineering Accessible Material States in Cu-Embedded SiO${}_x$ Memristive Devices

  By combining large-scale statistical analysis of more than 50,000 experimentally characterized devices with physics-based plasma and atomistic simulations, we show that device behavior does not emerge from deterministic process-to-performance mappings, but from a probabilistic cascade spanning defect formation, defect-state evolution, and functional-regime emergence.

  Tobias Gergs, Rouven Lamprecht, Sahitya Yarragolla and 5 more — arXiv

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