Orbital angular momentum accumulation in SrVO3 thin films
In the authors' words
Orbital transport in light transition metals has emerged as a promising route toward angular-momentum electronics, with Hanle magnetoresistance (HMR) providing a direct electrical probe of the orbital Hall effect (OHE) in non-magnetic conductors. Here we report magnetoresistance signatures consistent with orbital HMR in epitaxial SrVO (SVO), a narrow-band oxide grown on (001)-oriented (LaAlO)(SrTaAlO) substrates. In films of different thickness and longitudinal resistivity, field-dependent measurements reveal a reproducible positive, even-in-field, and approximately quadratic response, as expected for HMR. Angular measurements characterize the corresponding magnetoresistance anisotropy and reveal an additional non-Hanle contribution. Density functional theory (DFT) calculations yield an intrinsic orbital Hall conductivity and a spin Hall conductivity at the Fermi level, corresponding to , thus indicating a predominantly orbital response. Using the diffusive HMR framework with nm as a reference value, the 20.8 nm film gives conservative saturation-limit lower-bound (LB) estimates and , comparable to the DFT value. Across the series, lower-bound estimates obtained with the same increase overall with longitudinal conductivity. These results suggest that narrow-band metallic oxides are a promising platform for orbital transport.
Appeared: Monday, September 21. arXiv. Preprint, not yet peer-reviewed.
Authors' comment: 14 pages, 5 Figures